DocumentCode :
2467178
Title :
Noncontact Observation of Microdefects in N-GaAs Wafers by Photo-Thermal-Radiation and Photoluminescence Microscopy
Author :
Mikoshiba, N. ; Akutsu, Y. ; Nakamura, H. ; Tsubouchi, K. ; Hosokawa, M.
fYear :
1986
fDate :
17-19 Nov. 1986
Firstpage :
481
Lastpage :
486
Keywords :
Annealing; Gallium arsenide; Infrared detectors; Microscopy; Mirrors; Photoluminescence; Pulse measurements; Radiation detectors; Surface emitting lasers; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE 1986 Ultrasonics Symposium
Conference_Location :
Williamsburg, VA, USA
Type :
conf
DOI :
10.1109/ULTSYM.1986.198786
Filename :
1535726
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2467178
بازگشت