DocumentCode :
2467298
Title :
Temperature-related voltage generating circuit using MOS in strong inversion
Author :
Coimbra, Ricardo Pureza ; dos Reis Filho, Carlos Alberto
Author_Institution :
Sch. of Electr. & Comput. Eng., State Univ. of Campinas, Campinas, Brazil
fYear :
2010
fDate :
14-17 March 2010
Firstpage :
1591
Lastpage :
1595
Abstract :
System-on-Chip (SoC) integrated circuits frequently embed voltage references and temperature sensors. In view of the spread of battery-supplied products, there is a growing demand for low-power and low-voltage circuit solutions to implement these blocks. This paper describes the development of one such circuit structure that employs an alternative technique to generate reference and PTAT voltage signals based on a suitable arrangement of MOS transistors operating in strong inversion. Low-voltage prototypes were produced on the conventional process CMOS AMS 0.35um to provide the experimental results presented in this work. These results include the generation of a voltage reference signal with thermal coefficient lower than 10ppm/°C, from -40°C to 120°C, under a 1V power supply.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; system-on-chip; temperature sensors; CMOS AMS; MOS transistors; PTAT voltage signals; battery-supplied products; embed voltage references; low-power circuit solution; low-voltage circuit solution; size 0.35 mum; system-on-chip integrated circuits; temperature -40 C to 120 C; temperature sensors; temperature-related voltage generating circuit; CMOS process; Circuits; MOSFETs; Power generation; Power supplies; Prototypes; Signal generators; System-on-a-chip; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Technology (ICIT), 2010 IEEE International Conference on
Conference_Location :
Vi a del Mar
Print_ISBN :
978-1-4244-5695-6
Electronic_ISBN :
978-1-4244-5696-3
Type :
conf
DOI :
10.1109/ICIT.2010.5472452
Filename :
5472452
Link To Document :
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