• DocumentCode
    2467329
  • Title

    A differential difference amplifier for neural recording system with tunable low-frequency cutoff

  • Author

    Yao, Kai-Wen ; Lin, Wei-Chih ; Gong, Cihun-Siyong Alex ; Lin, Yu-Ying ; Shiue, Muh-Tian

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 mum 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 muVrms, power consumption of 25.9 muW, and 0.084 mm2 of chip area.
  • Keywords
    differential amplifiers; low noise amplifiers; low-power electronics; neural chips; DC offset rejection; MOS-bipolar pseudoresistor; ac coupling; capacitor series connection; differential difference amplifier; feedback capacitor; floating tunable resistor; frequency 107 Hz to 10.3 kHz; gain 40.8 dB; low frequency pole; low-frequency cutoff tuning; low-noise architecture; low-power architecture; neural action potential; neural amplifier; neural recording system; power 25.9 muW; size 0.18 mum; tunable low-frequency cutoff; CMOS process; Capacitors; Differential amplifiers; Frequency; Gain; Low-noise amplifiers; Neurofeedback; Passband; Resistors; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760720
  • Filename
    4760720