Title :
Design and analysis of 600 V power MOSFET with multiple field limiting ring
Author :
Tam, Wing-Shan ; Wong, Oi-Ying ; Kok, Chi-Wah ; Wong, Hei
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
Abstract :
This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed.
Keywords :
optimisation; power MOSFET; MEDICI simulation; MFFLR structure; cylindrical-junction effect; high voltage blocking capability; multiple field limiting ring; optimisation process; power MOSFET; sphere-junction effect; Analytical models; Breakdown voltage; Consumer electronics; Design engineering; Epitaxial layers; MOSFET circuits; Medical simulation; Power MOSFET; Power engineering and energy; Silicon;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760732
