DocumentCode
2467538
Title
Design and analysis of 600 V power MOSFET with multiple field limiting ring
Author
Tam, Wing-Shan ; Wong, Oi-Ying ; Kok, Chi-Wah ; Wong, Hei
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed.
Keywords
optimisation; power MOSFET; MEDICI simulation; MFFLR structure; cylindrical-junction effect; high voltage blocking capability; multiple field limiting ring; optimisation process; power MOSFET; sphere-junction effect; Analytical models; Breakdown voltage; Consumer electronics; Design engineering; Epitaxial layers; MOSFET circuits; Medical simulation; Power MOSFET; Power engineering and energy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760732
Filename
4760732
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