Title :
Study of degradation and breakdown properties of HfO2 dielectric by c-AFM and SSPM
Author :
An, J. ; Xue, K. ; Xu, J.B.
Author_Institution :
Dept. of Electron., Chinese Univ. of Hong Kong, Shatin
Abstract :
We study the degradation and breakdown (BD) properties of HfO2 dielectric layer by conductive AFM (c-AFM) and electrostatic force microscopy (SSPM). The experiments reveal that the degradation are accumulative processes, which is the consequence of the progressive trap generation and accumulation in dielectric and interfaces, eventually leading to the dielectric oxide permanent damage. The whole degradation process can be categorized into three stages: pre-BD, SBD and HBD.
Keywords :
atomic force microscopy; electric breakdown; hafnium compounds; high-k dielectric thin films; HfO2; breakdown properties; conductive AFM; degradation process; dielectric layer; dielectric oxide permanent damage; electrostatic force microscopy; trap generation; Channel bank filters; Curve fitting; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; Hafnium oxide; High K dielectric materials; Stress; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760733
