Optimizing technology of bulk electronic field for lateral high-voltage devices

Author

Zhang, Bo ; Cheng, Jianbing ; Hu, Shengdong ; Luo, Xiaorong ; Qiao, Ming ; Duan, Baoxing ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

6

Abstract

REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works of our lab on the application of the two technologies in bulk silicon and SOI devices.

Keywords

dielectric materials; electric breakdown; power integrated circuits; silicon-on-insulator; SOI device; breakdown voltage; bulk electronic field; bulk silicon; enhanced dielectric layer field; lateral high-voltage device; lateral power device; reduced bulk field; Breakdown voltage; Design optimization; Dielectric devices; Dielectric measurements; Dielectric substrates; Permittivity; Silicon devices; Silicon on insulator technology; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760735

Filename

4760735