Title :
Optimizing technology of bulk electronic field for lateral high-voltage devices
Author :
Zhang, Bo ; Cheng, Jianbing ; Hu, Shengdong ; Luo, Xiaorong ; Qiao, Ming ; Duan, Baoxing ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works of our lab on the application of the two technologies in bulk silicon and SOI devices.
Keywords :
dielectric materials; electric breakdown; power integrated circuits; silicon-on-insulator; SOI device; breakdown voltage; bulk electronic field; bulk silicon; enhanced dielectric layer field; lateral high-voltage device; lateral power device; reduced bulk field; Breakdown voltage; Design optimization; Dielectric devices; Dielectric measurements; Dielectric substrates; Permittivity; Silicon devices; Silicon on insulator technology; Thin film devices;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760735
