Title :
Grand challenges in power semiconductors
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Toledo, Toledo, OH
Abstract :
Semiconductor materials and devices used for high-power switching and amplification of electrical and optical signals are often subjected to extreme levels of electrical and thermal stresses. This paper presents new opportunities for developing rugged power semiconductor devices to meet the challenges of the 21st century energy conversion applications.
Keywords :
power semiconductor devices; thermal stresses; amplification; electrical signals; electrical stresses; high-power switching; optical signals; power semiconductor devices; semiconductor materials; thermal stresses; Crystalline materials; Energy conversion; Energy storage; Optical devices; Optical materials; Semiconductor devices; Semiconductor materials; Silicon carbide; Transportation; US Department of Energy;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760741
