Computational analysis of flow field in GaAs-MOCVD vertical rotating disk reactor

Author

Zheng, Wenbo ; Li, Jianjun ; Chen, Rui ; Yang, Wei ; Cui, Bifeng ; Han, Jun ; Deng, Jun

Author_Institution

KEY Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

24-26 June 2011

Firstpage

5821

Lastpage

5823

Abstract

This paper gives a detailed analysis and discussion of the flow field inside the type of D125 MOCVD reactor chamber through the analysis of three-dimensional mathematical model and calculation. Under a wide range of geometric and process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, and wafer carrier rotation. It is finally obtained the favorable conditions of the uniform distributions of velocity profiles inside the reactor. The CFD simulating results are beneficial to fixing on the process operating conditions document.

Keywords

MOCVD; chemical reactors; computational fluid dynamics; discs (structures); flow simulation; gallium arsenide; rotational flow; CFD simulation; D125 MOCVD reactor chamber; GaAs; chamber pressure; flow field; gas inlet; growth temperature; three-dimensional mathematical model; vertical rotating disk reactor; wafer carrier rotation; Computational fluid dynamics; Gallium arsenide; Inductors; MOCVD; Numerical models; CFD; MOCVD; Reactor;

fLanguage

English

Publisher

ieee

Conference_Titel

Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-9172-8

Type

conf

DOI

10.1109/RSETE.2011.5965678

Filename

5965678