Title :
A high-sensitivity transimpedance amplifier for 1.25-Gbps GE-PON system
Author :
Chen, J.J. ; Xu, J.P. ; Zhong, D.G. ; Li, C.X.
Author_Institution :
Dept. of Electron. Sci.&Technol., Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
A high-sensitivity transimpedance amplifier (TIA) for Gigabit Ethernet passive optical network (GE-PON) system is designed in 0.35-mum BiCMOS technology. This amplifier has a 1.37-GHz bandwidth and 55 k transimpedance gain. Also it exhibits a high sensitivity of -31.1 dBm at 1.25 Gbps with a PIN-PD instead of APD, which provides a low-cost and high-performance FTTH solution.
Keywords :
BiCMOS integrated circuits; amplifiers; optical fibre LAN; optical fibre subscriber loops; p-i-n photodiodes; BiCMOS technology; GE-PON system; PIN-PD; bandwidth -1.37 GHz; bit rate 1.25 Gbit/s; gigabit Ethernet passive optical network; high-performance FTTH solution; high-sensitivity transimpedance amplifier; size 0.35 mum; Bandwidth; Erbium; Optical amplifiers; Optical fiber subscriber loops; Optical noise; Optical receivers; Optical sensors; Photodiodes; Resistors; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760748
