Title :
A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung
Abstract :
Based on the exact solution of the two-dimensional Poisson equation, a new analytical behavior model consisting of the two-dimensional potential and threshold voltage for the short-channel tri-material gate-stack SOI MOSFETpsilas is developed. The model is verified by its good agreement with the numerical simulation of the device simulator MEDICI. The model not only offers physical insight into the device physics but also provides guidance for the basic design of the device.
Keywords :
MOSFET; Poisson equation; silicon-on-insulator; 2D Poisson equation; short-channel tri-material gate-stack SOI MOSFET; Analytical models; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Medical simulation; Physics; Poisson equations; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760750
