DocumentCode
2467909
Title
A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s
Author
Chiang, T.K.
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
5
Abstract
Based on the exact solution of the two-dimensional Poisson equation, a new analytical behavior model consisting of the two-dimensional potential and threshold voltage for the short-channel tri-material gate-stack SOI MOSFETpsilas is developed. The model is verified by its good agreement with the numerical simulation of the device simulator MEDICI. The model not only offers physical insight into the device physics but also provides guidance for the basic design of the device.
Keywords
MOSFET; Poisson equation; silicon-on-insulator; 2D Poisson equation; short-channel tri-material gate-stack SOI MOSFET; Analytical models; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Medical simulation; Physics; Poisson equations; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760750
Filename
4760750
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