InGaAs and graphene as high mobility channels for post Si-CMOS applications

Author

Ye, Peide D.

Author_Institution

Sch. of Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

5

Abstract

The continuous device scaling and performance improvements required by the International Technology Roadmap of Semiconductors (ITRS) are facing a grand challenge as conventional Si CMOS scaling comes to its fundamental physical limits. We review the research progress recently at Purdue University using In-rich InGaAs and epitaxial graphene on SiC as the novel channel materials for post Si CMOS applications suitable for the 15 nm node and beyond.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; gallium arsenide; graphene; indium compounds; nanostructured materials; semiconductor epitaxial layers; C; InGaAs; Si CMOS scaling; SiC; channel materials; device scaling; epitaxial graphene; graphene MOSFET; high mobility channels; post Si-CMOS applications; size 15 nm; Aluminum oxide; FETs; Gallium arsenide; HEMTs; High-K gate dielectrics; III-V semiconductor materials; Indium gallium arsenide; MODFETs; MOSFETs; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760751

Filename

4760751