InGaAs and graphene as high mobility channels for post Si-CMOS applications

The continuous device scaling and performance improvements required by the International Technology Roadmap of Semiconductors (ITRS) are facing a grand challenge as conventional Si CMOS scaling comes to its fundamental physical limits. We review the research progress recently at Purdue University using In-rich InGaAs and epitaxial graphene on SiC as the novel channel materials for post Si CMOS applications suitable for the 15 nm node and beyond.