DocumentCode :
2467955
Title :
Circuit implementation to describe the physical behavior of phase change memory
Author :
Kwong, K.C. ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear :
2008
fDate :
8-10 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit elements to study a complete PCM circuits including drivers and access circuits.
Keywords :
phase change memories; PCM physical property; circuit elements; circuit implementation; nonvolatile memory; phase change memory; Circuits; Crystallization; Equations; Heating; Nonvolatile memory; Phase change materials; Phase change memory; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
Type :
conf
DOI :
10.1109/EDSSC.2008.4760753
Filename :
4760753
Link To Document :
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