DocumentCode
2467955
Title
Circuit implementation to describe the physical behavior of phase change memory
Author
Kwong, K.C. ; Chan, Mansun
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit elements to study a complete PCM circuits including drivers and access circuits.
Keywords
phase change memories; PCM physical property; circuit elements; circuit implementation; nonvolatile memory; phase change memory; Circuits; Crystallization; Equations; Heating; Nonvolatile memory; Phase change materials; Phase change memory; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760753
Filename
4760753
Link To Document