• DocumentCode
    2467955
  • Title

    Circuit implementation to describe the physical behavior of phase change memory

  • Author

    Kwong, K.C. ; Chan, Mansun

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit elements to study a complete PCM circuits including drivers and access circuits.
  • Keywords
    phase change memories; PCM physical property; circuit elements; circuit implementation; nonvolatile memory; phase change memory; Circuits; Crystallization; Equations; Heating; Nonvolatile memory; Phase change materials; Phase change memory; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760753
  • Filename
    4760753