Title :
An E-mode GaAs FET power amplifier MMIC for GSM phones
Author :
Abey, W. ; Kawai, T. ; Okamoto, I. ; Suzuki, M. ; Khandavalli, C. ; Kennan, W. ; Tateno, Y. ; Nagahara, M. ; Takikawa, M.
Author_Institution :
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
Abstract :
An enhancement-mode three stage GaAs FET power MMIC has been developed for single supply portable applications. The MMIC operates from a 4.8 V power supply and provides over 35 dBm output power from 890-915 MHz with more than 35 dB gain and 47% power added efficiency. Power control range is greater than 70 dB. Leakage current is 2 uA.
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; land mobile radio; telephone sets; 35 dB; 4.8 V; 47 percent; 890 to 915 MHz; GSM phone; GaAs; enhancement-mode three stage GaAs FET power amplifier MMIC; gain; leakage current; output power; power added efficiency; power control range; single supply portable application; FETs; GSM; Gain; Gallium arsenide; Leakage current; MMICs; Power amplifiers; Power control; Power generation; Power supplies;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596569
