Title :
On structure and properties of plasma polymerized organo-silicon films
Author :
Gerstenberg, K.W.
Author_Institution :
Philips GmbH Forschungslab. Hamburg, West Germany
Abstract :
Amorphous-silicon-containing plasma-polymerized films are assumed to have a continuous-random-network (CRN) structure. The size of the voids affects the dielectric behavior of the film. In particular the dependence of aging in ambient atmosphere on the structure of hexamethyldisilazane-based a-Si:C:N:H films is shown
Keywords :
ageing; dielectric losses; dielectric thin films; noncrystalline state structure; plasma deposited coatings; silicon compounds; voids (solid); aging; amorphous Si-C-N-H films; continuous random network structure; dielectric behavior; dielectric loss; hexamethyldisilazane; plasma polymerized organo-silicon films; voids; Amorphous materials; Anodes; Atomic layer deposition; Biological materials; Cathodes; Electromagnetic wave absorption; Plasma materials processing; Plasma properties; Polymer films; Voltage;
Conference_Titel :
Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
Conference_Location :
Cambridge, MA
DOI :
10.1109/ELINSL.1988.13888
