A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications

Author

Der-Woei Wu ; Parkhurst, R. ; Shyh-Liang Fu ; Wei, J. ; Chung-Yi Su ; Shih-Shun Chang ; Moy, D. ; Fields, W. ; Chye, P. ; Levitsky, R.

Author_Institution

Commun. Semicond. Solutions Div., Hewlett-Packard Co., Newark, CA, USA

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1319

Abstract

An enhancement-mode power PHEMT process has been developed for low-voltage wireless subscriber power amplifier applications. Employing a highly selective reactive ion etching process to define the vertical position of the Schottky gate, this device only requires a positive voltage. A 12-mm gate periphery device demonstrated 33 dBm output power (167 mW/mm), 14.7 dB power gain (16.7 dB linear gain), and 65.4% PAE at 3 V and 1.8 GHz.

Keywords

UHF field effect transistors; land mobile radio; personal communication networks; power HEMT; power field effect transistors; sputter etching; 1.8 GHz; 14.7 dB; 2 W; 3 V; 65 percent; PAE; PCS; Schottky gate; low-voltage wireless subscriber power amplifier; output power; power gain; selective reactive ion etching; single-supply enhancement-mode power PHEMT; Etching; Fabrication; Gain; Gallium arsenide; Gold; Knee; Low voltage; PHEMTs; Personal communication networks; Phase change materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596570

Filename

596570