Dielectric properties of plasma polymerized thin films of tetramethylsilane and ammonia

Author

Sadhir, R.K. ; Saunders, E.E. ; Bennett, A.I.

Author_Institution

Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA

fYear

1988

fDate

5-8 June 1988

Firstpage

145

Lastpage

148

Abstract

Films produced by plasma deposition of a mixture of tetramethylsilane (TMS) and ammonia (NH/sub 3/) at different substrate temperatures were studied. The intent was to produce films comprising organo-silicon polymers with inorganic-type silicon nitride. Measurements of the rate of deposition, composition, structure and electrical properties (over a wide range of frequency) of films deposited at various temperatures are reported and discussed. Parameters such as flow rates, RF power, and position of the substrate were held constant. An attempt is made to correlate the electrical properties with the composition.<>

Keywords

ammonia; dielectric losses; dielectric thin films; electric breakdown of solids; electric strength; organic compounds; plasma deposited coatings; spectrochemical analysis; NH/sub 3/; RF power; composition; deposition rate; dielectric films; electrical properties; flow rates; organo-silicon polymers; plasma deposition; plasma polymerized thin films; structure; substrate temperatures; tetramethylsilane; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; Plasma measurements; Plasma properties; Plasma temperature; Polymer films; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on

Conference_Location

Cambridge, MA, USA

ISSN

1089-084X

Type

conf

DOI

10.1109/ELINSL.1988.13889

Filename

13889