Title :
High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system
Author :
Nagaoka, M. ; Wakimoto, H. ; Kawakyu, K. ; Nishihori, K. ; Kitaura, Y. ; Sasaki, T. ; Kameyama, A. ; Uchitomi, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A low-voltage GaAs power amplifier for 1.9-GHz digital mobile communication applications such as PHS handsets has been developed, using refractory WNx/W self-aligned gate MESFETs with p-pocket layers. This power amplifier operates with a single low 2-V supply, and an output power of 21.0 dBm, a power gain of 22.3 dB, a low dissipated current of 162.9 mA and a high power-added efficiency of 38.5% were attained with a low 600-kHz adjacent channel leakage power of -58.0 dBc for 1.9-GHz /spl pi//4-shifted QPSK modulated input.
Keywords :
III-V semiconductors; UHF power amplifiers; cordless telephone systems; digital radio; gallium arsenide; power MESFET; power amplifiers; telephone sets; /spl pi//4-shifted QPSK modulation; 1.9 GHz; 162.9 mA; 2 V; 22.3 dB; 38.5 percent; GaAs; PHS handset; WN-W; adjacent channel leakage; current dissipation; digital cordless phone; low-voltage GaAs power amplifier; mobile communication; output power; p-pocket layer; power gain; power-added efficiency; refractory WNx/W self-aligned gate MESFET; Batteries; FETs; Gallium arsenide; High power amplifiers; MESFETs; Operational amplifiers; Power amplifiers; Quadrature phase shift keying; Telephone sets; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596571
