Title :
Novel applications of AlAs oxide to optoelectronic devices
Author :
Dupkus, P.D. ; Bond, A.E. ; Choi, W.-J. ; Kobayashi, N.P. ; Kobayashi, J.T. ; Lin, C.K.
Author_Institution :
Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Summary form only given. We will describe the application of stable AlGaAs oxides as integrable low index optical materials and insulators in VCSEL based OEICs where the oxide serves not only as a current and mode aperture in but as an optical material that can be used to engineer the reflectivity of VCSEL mirrors and the cavity refractive index profile
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; refractive index; semiconductor lasers; surface emitting lasers; AlAs; AlAs oxide optoelectronic devices; AlGaAs; VCSEL based OEICs; VCSEL mirrors; cavity refractive index profile; insulators; integrable low index optical materials; mode aperture; reflectivity; stable AlGaAs oxides; Apertures; Bonding; Crystallization; Gallium nitride; Insulation; Optical devices; Optical materials; Optoelectronic devices; Photonics; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739445
