1 μm-scale oxide/semiconductor photonic lattice fabrication by wet oxidation methods

Author

Smith, C.J.M. ; Hobbs, L. ; Krauss, T.F. ; De La Rue, R.M. ; Dawson, M.D.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

32

Abstract

We have shown that “all-solid” 1D and 2D oxide/semiconductor grating microstructures, with feature size of 1 μm and 1:1 height:width aspect ratio, may be formed in a controlled manner by top-down pattern-masked wet-thermal oxidation of compositionally-graded AlGaAs layers. This approach is expected to have considerable impact in the fabrication of practical photonic lattice light-emitting devices

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; light emitting devices; masks; optical fabrication; oxidation; photonic band gap; 1 mum; AlGaAs; compositionally-graded AlGaAs layers; feature size; height:width aspect ratio; oxide/semiconductor grating microstructures; oxide/semiconductor photonic lattice fabrication; practical photonic lattice light-emitting device fabrication; top-down pattern-masked wet-thermal oxidation; wet oxidation methods; Diode lasers; Etching; Fabrication; Gratings; Lattices; Microstructure; Optical control; Oxidation; Semiconductor laser arrays; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739446

Filename

739446