Implantation induced optical losses in GaAs-AlGaAs distributed Bragg mirrors

Author

Cohen, M.I. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

45

Abstract

We have examined the use of oxygen as an efficient species for creating current confinement in implanted VCSELs. Although oxygen isolation is a widely studied topic, it is rare to find in the literature the study of the optical damage caused by the oxygen implant. This optical damage is extremely consequential in VCSELs due to the weak gain guidance provided by the gain profile. In order to study the oxygen implantation induced optical damage, an n-type modulation doped, graded composition mirror was grown by low pressure MOCVD

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; ion implantation; laser mirrors; optical losses; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; GaAs-AlGaAs distributed Bragg mirrors; VCSELs; gain profile; graded composition mirror; implantation induced optical losses; implanted VCSELs; low pressure MOCVD; n-type modulation doped; optical damage; oxygen implant; oxygen isolation; weak gain guidance; Annealing; Gallium arsenide; Implants; Mirrors; Optical losses; Optical materials; Particle beam optics; Protons; Reflectivity; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739452

Filename

739452