DocumentCode
2470606
Title
Characterisation of the resolution of impurity free vacancy disordering in GaAs-AlGaAs using Raman and photoluminescence correlation measurements
Author
Saher Helmy, A. ; Bryce, A.C. ; Ironside, C.N. ; Aitchison, J.S. ; Marsh, John H. ; Gontijo, I. ; Buller, Gerald S. ; Karlin, Susan ; Wilcock, I.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
47
Abstract
We have demonstrated that Raman micro-probe has a better resolution than that of photoluminescence measurements in resolving GaAs-AlGaAs heterostructure intermixing. The technique is therefore suitable for characterising high resolution QWI processes
Keywords
III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; photoluminescence; photon correlation spectroscopy; semiconductor quantum wells; GaAs-AlGaAs; GaAs-AlGaAs heterostructure intermixing; Raman micro-probe; Raman spectra; high resolution QWI processes; impurity free vacancy disordering; photoluminescence correlation measurements; Annealing; Dielectric measurements; Gallium arsenide; Gratings; Impurities; Length measurement; Phonons; Quantum well devices; Signal detection; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739453
Filename
739453
Link To Document