Title :
Red and infrared semiconductor lasers integrated on GaAs substrate by etching and regrowth
Author :
Sun, D. ; Treat, D.W. ; Beernink, K. ; Bringans, R.D. ; Kovacs, G.J.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
We report the use of selective epitaxy to integrate red and infrared (IR) lasers side by side on a GaAs substrate. The integrated dual-beam red-IR lasers are separated by 50 μm and are independently addressable
Keywords :
etching; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 50 mum; GaAs; GaAs substrate; etching; independently addressable; infrared semiconductor lasers; integrated dual-beam red-IR lasers; red semiconductor lasers; regrowth; selective epitaxy; Chemical lasers; Gallium arsenide; Laser modes; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Substrates; Waveguide lasers; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739454
