Title :
Vertical integration of dual wavelength index guided GaAs-lasers
Author :
Karouta, F. ; Tan, H.H. ; Jagadish, C. ; van Roy, B.H.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
We present a vertically integrated GaAs-InGaAs double QW laser device. The two wavelengths can be designed fully independent of each other. Both lasers are index-guided and hence capable of emitting light in the lateral fundamental mode. In our case the distance between the two laser spots is about 20 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; integrated optics; laser modes; quantum well lasers; refractive index; waveguide lasers; 20 mum; GaAs-InGaAs; GaAs-InGaAs double QW laser device; dual wavelength index guided GaAs-lasers; emitting light; fully independent; index-guided; laser spots; lateral fundamental mode; vertical integration; Etching; Fiber lasers; Gallium arsenide; Laser modes; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739455
