Title :
Anger and electrical analysis of Pt/Au and Ni/An contacts to p-GaN
Author :
King, D.J. ; Zhang, L. ; Ramer, J.C. ; Rice, A. ; Malloy, K.J. ; Hersee, S.D. ; Lester, L.F. ; Wood, Mark
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Auger electron spectroscopy (AES) is used to investigate the effect that high temperature annealing has on GaN and metal contacts to p-GaN. Current-voltage characteristics are used to determine the Schottky barrier heights and ideality factors of Pt-Au and Ni-Au contacts to p-GaN, and the effect of temperature on the contact characteristics is also examined
Keywords :
Auger electron spectra; Auger electron spectroscopy; III-V semiconductors; electrical contacts; gallium compounds; Auger electron spectroscopy; GaN; Ni-Au; Ni/An contacts; Pt-Au; Pt/Au contacts; Schottky barrier height; contact characteristics; current-voltage characteristics; high temperature annealing; metal contacts; p-GaN; Annealing; Contact resistance; Gallium nitride; Gold; Laboratories; Metallization; Nickel; Ohmic contacts; Schottky barriers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739456
