Title :
4E-1 Periodically Poled Transducers Built on Single Crystal Lithium Niobate Layers Bonded onto Silicon
Author :
Courjon, E. ; Gachon, D. ; Gauthier-Manuel, L. ; Daniau, W. ; Bodin, N. ; Ballandras, S. ; Hauden, J.
Author_Institution :
Inst. FEMTO-ST, Besancon
Abstract :
In this paper, we present new results on the development of piezoelectric transducers based on periodically poled ferroelectric domains on lithium niobate bonded on silicon. The fabrication of the periodically poled transducers operating in the range 50-500 MHz has been achieved on a 3" 500 mum thick wafer. These devices have then been bonded on a silicon wafer and thinned to a few ten microns thick. Guided elliptic as well as partially guided longitudinal modes are excited, yielding phase velocity of about 3800 and 7000 m.s-1 respectively. The experimental responses of the tested devices are compared to predicted harmonic admittances, showing a good agreement between both results and allowing for a reliable analysis of the nature of the excited modes.
Keywords :
acoustic transducers; ferroelectric devices; lithium compounds; piezoelectric transducers; wafer bonding; LiNbO3; Si; ferroelectric domains; frequency 50 MHz to 500 MHz; guided elliptic modes; guided longitudinal modes; harmonic admittances; periodically poled transducers; piezoelectric transducers; single crystal lithium niobate layers; size 3 mum to 500 mum; wafer bonding; Acoustic transducers; Fabrication; Ferroelectric materials; Frequency; Lithium niobate; Optical resonators; Piezoelectric transducers; Silicon; Testing; Wafer bonding;
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2007.78