Title :
Calculation of reflection efficiency in waveguide DBR by spatially selective disordering of GaAs0.19P0.9-Al0.3 Ga0.7As MQWs
Author :
Jacob, Biju ; Das, Utpal
Author_Institution :
Dept. of Electr. Eng., IIT, Kanpur, India
Abstract :
A model for refractive index change of F induced disordering of GaAsP-AlGaAs QWs shows that index changes ~0.1-0.4 at 45 mins anneal provides 99% reflection efficiency of 500 μm long waveguide DBR
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; optical waveguides; refractive index; semiconductor quantum wells; 45 min; 500 mum; 99 percent; F induced disordering; GaAs0.19P0.9-Al0.3Ga0.7 As; GaAs0.19P0.9-Al0.3Ga0.7 As MQW; GaAsP-AlGaAs QWs; anneal; index changes; long waveguide DBR; reflection efficiency; spatially selective disordering; waveguide DBR; Annealing; Dielectrics; Distributed Bragg reflectors; Distributed feedback devices; Gallium arsenide; Gratings; Optical reflection; Quantum well devices; Refractive index; Transmission line matrix methods;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739457
