DocumentCode :
2470766
Title :
4E-4 Propagation Characteristics of SH-SAW in (1120) ZnO Layer/Silica Glass Substrate Structures
Author :
Tanaka, Atsushi ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki
Author_Institution :
Doshisha Univ., Kyotanabe
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
280
Lastpage :
283
Abstract :
A (1120) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K1) in the ZnO (0deg, 90deg, psi) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0deg, 90deg, 55deg) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/lambda=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.
Keywords :
II-VI semiconductors; glass; piezoelectric thin films; sputter deposition; surface acoustic wave devices; zinc compounds; IDT electrode; RF magnetron sputtering; SH-SAW device; SH-SAW excitation; ZnO; electromechanical coupling coefficients; silica glass substrate; surface acoustic wave propagation; textured ZnO film; Glass; Silicon compounds; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
ISSN :
1051-0117
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2007.81
Filename :
4409654
Link To Document :
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