Title :
The direct extraction of the model parameters for the high-speed low-threshold semiconductor laser
Author :
Jianjun, Gao ; Baoxin, Gao ; Chunguang, Liang
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A new method which directly extracts the model parameters for the high-speed low-threshold semiconductor laser is presented. Only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used and it is not necessary to fit the intensity modulation frequency response or the relative noise intensity response thus avoiding the effect of optical feedback
Keywords :
equivalent circuits; laser theory; semiconductor device models; semiconductor lasers; direct extraction; high-speed semiconductor laser; low-threshold semiconductor laser; model parameters; relaxation oscillation frequency characteristics; terminal impedance characteristics; Frequency response; Impedance; Intensity modulation; Laser feedback; Laser modes; Laser noise; Optical feedback; Optical noise; Semiconductor device noise; Semiconductor lasers;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654605
