Title :
New electroabsorption modulator with triode structure for optical gating
Author :
Yamada, Koji ; Nakamura, Koji ; Horikawa, Hideaki
Author_Institution :
Opt.-Electron. Labs., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
An electroabsorption (EA) modulator is an attractive device for optical gating. Using EA modulators operated by sinusoidal modulations gives us a simple method for optical demultiplexing. We propose a triode type EA (Tr-EA) modulator as the optical gate switch to achieve full gating operation with a O to 100% time slot window corresponding to the demultiplexed bit-rate. An InGaAsP bulk absorber and a high-mesa ridge waveguide buried with polyimide is used
Keywords :
III-V semiconductors; demultiplexing equipment; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; gallium compounds; indium compounds; triodes; InGaAsP; InGaAsP bulk absorber; demultiplexed bit-rate; electroabsorption modulator; full gating operation; high-mesa ridge waveguide; optical demultiplexing; optical gate switch; optical gating; sinusoidal modulations; time slot window; triode structure; triode type; Demultiplexing; Digital modulation; Electrodes; Optical devices; Optical modulation; Optical receivers; Optical transmitters; PIN photodiodes; Stimulated emission; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739471
