Uncooled operation of 1.3 μm AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy

Author

Savolainen, P. ; Toivonen, M. ; Orsila, S. ; Pessa, M. ; Salokatve, A. ; Asonen, H. ; Panarello, T. ; Murison, R.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

104

Abstract

All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 μm AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 1.3 mum; AlGaInAs-AlInAs-InP; AlGaInAs-AlInAs-lnP laser diodes; AlGaInAs/AlInAs/InP laser diodes; MBE; SSMBE grown material; fabrication problems; high-performance laser diodes; solid group-V sources; solid source molecular beam epitaxy; uncooled operation; Chemical lasers; Diode lasers; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Quantum well lasers; Semiconductor lasers; Solids; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739482

Filename

739482