DocumentCode
2471195
Title
The effect of temperature on the color temperature of GaN-based LED
Author
Weiguo Li ; Weiling Guo ; Xinwei Xu ; Desheng Cui
Author_Institution
KEY Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China
fYear
2011
fDate
24-26 June 2011
Firstpage
6468
Lastpage
6471
Abstract
In this paper, two kinds of GaN-based light emitting diodes (LED) with difference in color temperature were tested under the temperature range from 283K to 353K and current of 350mA.The samples were fabricated with the same blue-ray chip but coated by different yttrium aluminum garnet (YAG) phosphor. After analyzing the PL spectrum, the result shows that the color temperature of LED increases while temperature raising, what´s more, the cool-color-temperature LED increases more. It also proves that the color temperature of GaN-based write LED has relation to the proportion of blue ray radiant flux.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; phosphors; photoluminescence; wide band gap semiconductors; yttrium compounds; GaN-YAG; blue ray radiant flux; blue-ray chip; cool-color-temperature LED; current 350 mA; light emitting diodes; photoluminescence spectra; temperature 283 K to 353 K; yttrium aluminum garnet phosphor; Color; Gallium nitride; Junctions; Light emitting diodes; Phosphors; Temperature distribution; YAG phosphor; color temperature; light emitting diode; red shift;
fLanguage
English
Publisher
ieee
Conference_Titel
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-9172-8
Type
conf
DOI
10.1109/RSETE.2011.5965838
Filename
5965838
Link To Document