• DocumentCode
    2471195
  • Title

    The effect of temperature on the color temperature of GaN-based LED

  • Author

    Weiguo Li ; Weiling Guo ; Xinwei Xu ; Desheng Cui

  • Author_Institution
    KEY Lab. of Opto-Electron. Technol., Beijing Univ. of Technol., Beijing, China
  • fYear
    2011
  • fDate
    24-26 June 2011
  • Firstpage
    6468
  • Lastpage
    6471
  • Abstract
    In this paper, two kinds of GaN-based light emitting diodes (LED) with difference in color temperature were tested under the temperature range from 283K to 353K and current of 350mA.The samples were fabricated with the same blue-ray chip but coated by different yttrium aluminum garnet (YAG) phosphor. After analyzing the PL spectrum, the result shows that the color temperature of LED increases while temperature raising, what´s more, the cool-color-temperature LED increases more. It also proves that the color temperature of GaN-based write LED has relation to the proportion of blue ray radiant flux.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; phosphors; photoluminescence; wide band gap semiconductors; yttrium compounds; GaN-YAG; blue ray radiant flux; blue-ray chip; cool-color-temperature LED; current 350 mA; light emitting diodes; photoluminescence spectra; temperature 283 K to 353 K; yttrium aluminum garnet phosphor; Color; Gallium nitride; Junctions; Light emitting diodes; Phosphors; Temperature distribution; YAG phosphor; color temperature; light emitting diode; red shift;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-9172-8
  • Type

    conf

  • DOI
    10.1109/RSETE.2011.5965838
  • Filename
    5965838