Title :
Parametric analysis of AlAs wet oxidation process for application in VCSELs
Author :
Koley, B. ; Wasiczko, L. ; Whaley, R., Jr. ; Johnson, F.G. ; Simonis, G. ; Dagenais, M.
Author_Institution :
Maryland Univ., College Park, MD, USA
Abstract :
The selective nature of wet oxidation of high Al content AlGaAs has been successfully employed in the fabrication of various highly efficient, low-threshold-current vertical cavity surface emitting laser (VCSEL) structures. For this technology to be used in batch manufacturing in a predictable way, a thorough understanding of the oxidation process is required. We describe a study on the kinetics of oxidation. We, for the first time, report our studies on the dependence of wet oxidation process on important process parameters like water bubbler temperature and N2 gas flow rate
Keywords :
III-V semiconductors; aluminium compounds; optical fabrication; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; AlAs; AlAs wet oxidation process; AlGaAs; N2 gas flow rate; VCSELs; low-threshold-current vertical cavity surface emitting laser; oxidation kinetics; parametric analysis; process parameters; water bubbler temperature; Fluid flow; Furnaces; Kinetic theory; Laboratories; Manufacturing processes; Optical device fabrication; Oxidation; Surface emitting lasers; Temperature dependence; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739486
