Title :
Improved lateral wet-oxidation of In0.52Al0.48As
Author :
Zhan, Jizhi ; Couse, D. ; Zhu, Z.H. ; Lo, Y.H.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We found that, by capping the samples with an InP wafer, a constant lateral oxidation rate of 6.3 μm/hr could be achieved at 530 C for InAlAs, and surface morphology could be improved. In addition, Auger electron spectroscopy (AES) showed that nearly all arsenic and some indium in the InAIAs layer had diffused out during the oxidation. We show the schematic of the samples for the experiment, which was initially designed for wafer-bonded VCSELs
Keywords :
Auger electron spectroscopy; III-V semiconductors; aluminium compounds; indium compounds; optical fabrication; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; 530 C; Auger electron spectroscopy; In0.52Al0.48As; InAIAs layer; InP; lateral wet-oxidation; surface morphology; wafer-bonded VCSELs; Bars; Ceramics; Indium compounds; Indium phosphide; Optical materials; Optical microscopy; Optical scattering; Oxidation; Pollution measurement; Surface morphology;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739487
