• DocumentCode
    2471273
  • Title

    Improved lateral wet-oxidation of In0.52Al0.48As

  • Author

    Zhan, Jizhi ; Couse, D. ; Zhu, Z.H. ; Lo, Y.H.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    3-4 Dec 1998
  • Firstpage
    114
  • Abstract
    We found that, by capping the samples with an InP wafer, a constant lateral oxidation rate of 6.3 μm/hr could be achieved at 530 C for InAlAs, and surface morphology could be improved. In addition, Auger electron spectroscopy (AES) showed that nearly all arsenic and some indium in the InAIAs layer had diffused out during the oxidation. We show the schematic of the samples for the experiment, which was initially designed for wafer-bonded VCSELs
  • Keywords
    Auger electron spectroscopy; III-V semiconductors; aluminium compounds; indium compounds; optical fabrication; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; 530 C; Auger electron spectroscopy; In0.52Al0.48As; InAIAs layer; InP; lateral wet-oxidation; surface morphology; wafer-bonded VCSELs; Bars; Ceramics; Indium compounds; Indium phosphide; Optical materials; Optical microscopy; Optical scattering; Oxidation; Pollution measurement; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.739487
  • Filename
    739487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471273