DocumentCode
2471300
Title
1.5 μm buried heterostructure InGaAsP-InP MQW laser with native-oxidized InAlAs current block layer
Author
Jie, Wang Zhi ; Jin, Chua Soo ; Fan, Zhou ; Jie, Wang Xiao ; Wei, Wang ; Han, Wu Rong
Author_Institution
Inst. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
116
Abstract
We proposed to eliminate the current leakage from p-n reverse-biased-junction BH InGaAsP-InP laser under high temperature operation by utilizing native-oxidized InAlAs current blocking layer. The characteristic temperature of 50 K has been preliminarily achieved
Keywords
Debye temperature; III-V semiconductors; carrier mobility; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.5 mum; 50 K; InAlAs; InGaAsP-InP; InGaAsP-InP MQW laser; characteristic temperature; current leakage; high temperature operation; native-oxidized InAlAs current block layer; native-oxidized InAlAs current blocking layer; p-n reverse-biased-junction BH InGaAsP-lnP laser; Etching; Fiber lasers; Indium compounds; Indium phosphide; Laser theory; Leakage current; P-n junctions; Quantum well devices; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739488
Filename
739488
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