Title :
1.5 μm buried heterostructure InGaAsP-InP MQW laser with native-oxidized InAlAs current block layer
Author :
Jie, Wang Zhi ; Jin, Chua Soo ; Fan, Zhou ; Jie, Wang Xiao ; Wei, Wang ; Han, Wu Rong
Author_Institution :
Inst. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We proposed to eliminate the current leakage from p-n reverse-biased-junction BH InGaAsP-InP laser under high temperature operation by utilizing native-oxidized InAlAs current blocking layer. The characteristic temperature of 50 K has been preliminarily achieved
Keywords :
Debye temperature; III-V semiconductors; carrier mobility; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.5 mum; 50 K; InAlAs; InGaAsP-InP; InGaAsP-InP MQW laser; characteristic temperature; current leakage; high temperature operation; native-oxidized InAlAs current block layer; native-oxidized InAlAs current blocking layer; p-n reverse-biased-junction BH InGaAsP-lnP laser; Etching; Fiber lasers; Indium compounds; Indium phosphide; Laser theory; Leakage current; P-n junctions; Quantum well devices; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739488
