DocumentCode :
247131
Title :
Metasurface with reconfigurable reflection phase for high-power microwave applications
Author :
Morgan, Kelsey ; Scarborough, Clinton ; Gregory, Mark ; Werner, David ; Werner, Philipp ; Griffiths, Scott F.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
2014
fDate :
6-11 July 2014
Firstpage :
1230
Lastpage :
1231
Abstract :
We propose a metasurface with reconfigurable reflection phase that can operate in high power microwave (HPM) applications. The structure relies on capacitor networks controlled by appropriately biased PIN diodes. Simulations reveal that the metasurface has a reflection phase tuning range of approximately 300 degrees with an associated change in capacitance of 2.7 pF.
Keywords :
microwave diodes; p-i-n diodes; HPM applications; biased PIN diodes; capacitance 2.7 pF; capacitor networks; high-power microwave applications; metasurface; reconfigurable reflection phase; Capacitance; Capacitors; Metamaterials; PIN photodiodes; Reflection; Surface impedance; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location :
Memphis, TN
ISSN :
1522-3965
Print_ISBN :
978-1-4799-3538-3
Type :
conf
DOI :
10.1109/APS.2014.6904942
Filename :
6904942
Link To Document :
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