• DocumentCode
    2471322
  • Title

    Selective oxidation of AlxIn1-xAs as grown on InP and its application to long wavelength lasers

  • Author

    Iwai, N. ; Mukaihara, T. ; Itoh, M. ; Yamanaka, N. ; Arakawa, S. ; Shimizu, H. ; Kasukawa, A.

  • Author_Institution
    Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • Volume
    2
  • fYear
    1998
  • fDate
    3-4 Dec 1998
  • Firstpage
    118
  • Abstract
    We have investigated oxidation rate of an AlInAs layer grown on InP substrate. It is found that oxidation rate in AlxIn1-xAs layer increases with temperature and layer thickness, and shows no dependence on Al-content in the range of 0.48 (lattice-match) to 0.7. The electrical characteristics of 50 nm-thick AlInAs-oxide shows good current blocking for laser application. The optimum temperature was found to be around 500°C, taking oxidation rate and surface morphology into account. AlInAs-oxide confined inner stripe laser (ACIS) is fabricated for the first time
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; 50 nm; 500 C; AlxIn1-xAs; AlxIn1-xAs layer; AlInAs; AlInAs layer; AlInAs-oxide confined inner stripe laser fabrication; InP; InP substrate; current blocking; laser application; layer thickness; long wavelength lasers; oxidation rate; selective oxidation; surface morphology; Artificial intelligence; Chemicals; Electric variables; Indium phosphide; Laser applications; Optical device fabrication; Oxidation; Surface morphology; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.739489
  • Filename
    739489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471322