Intense photoluminescence from Eu-doped silicon-rich silicon oxide films prepared by electron beam evaporation

Author

Zhang, Xuwu ; Yang, Deren ; Li, Dongsheng ; Wang, Minghua

Author_Institution

Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

66

Lastpage

68

Abstract

Eu-doped silicon-rich silicon oxide (SRSO) films on P (100) Si substrate were deposited by electron beam evaporation (EBE). The effect of annealing procedure on the photoluminescence (PL) has been investigated in detail. Experimental results show that after 1100degC annealing at non-reductive atmosphere, the films are revealed to yield an intense broad band yellow light emission. PL spectra of the broad yellow band are centered at about 530 nm which agrees with 4f⁶5d-4f⁷(⁸S_7/2) transition of divalent europium ions (Eu²⁺). And the existence of Eu²⁺ has been further confirmed by XPS measurement results.

Keywords

X-ray photoelectron spectra; annealing; europium; photoluminescence; silicon compounds; thin films; vacuum deposition; 4f⁶5d-4f⁷(⁸S_7/2) transition; Eu-doped silicon-rich silicon oxide films; P-type (100) Si substrate; SRSO films; Si; SiO₂:Eu; X-ray photoelectron spectra; XPS measurement; annealing; divalent europium ions; electron beam evaporation; intense broad band yellow light emission; intense photoluminescence; nonreductive atmosphere; temperature 1100 degC; wavelength 530 nm; Annealing; Atmosphere; Electron beams; Laser excitation; Monitoring; Optical films; Photoluminescence; Semiconductor films; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338286

Filename

5338286