Title :
Intense photoluminescence from Eu-doped silicon-rich silicon oxide films prepared by electron beam evaporation
Author :
Zhang, Xuwu ; Yang, Deren ; Li, Dongsheng ; Wang, Minghua
Author_Institution :
Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Eu-doped silicon-rich silicon oxide (SRSO) films on P (100) Si substrate were deposited by electron beam evaporation (EBE). The effect of annealing procedure on the photoluminescence (PL) has been investigated in detail. Experimental results show that after 1100degC annealing at non-reductive atmosphere, the films are revealed to yield an intense broad band yellow light emission. PL spectra of the broad yellow band are centered at about 530 nm which agrees with 4f65d-4f7(8S7/2) transition of divalent europium ions (Eu2+). And the existence of Eu2+ has been further confirmed by XPS measurement results.
Keywords :
X-ray photoelectron spectra; annealing; europium; photoluminescence; silicon compounds; thin films; vacuum deposition; 4f65d-4f7(8S7/2) transition; Eu-doped silicon-rich silicon oxide films; P-type (100) Si substrate; SRSO films; Si; SiO2:Eu; X-ray photoelectron spectra; XPS measurement; annealing; divalent europium ions; electron beam evaporation; intense broad band yellow light emission; intense photoluminescence; nonreductive atmosphere; temperature 1100 degC; wavelength 530 nm; Annealing; Atmosphere; Electron beams; Laser excitation; Monitoring; Optical films; Photoluminescence; Semiconductor films; Silicon; Temperature;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338286
