Title :
High power 980-nm lasers with external differential efficiency improved by rapid thermal annealing
Author :
Yuan, Shu ; Fu, L. ; Chang, Y. ; Tan, H.H. ; Li, G. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report the effects of postgrowth rapid thermal annealing (RTA) on InGaAs-AlGaAs 980-nm lasers grown by metalorganic chemical vapor deposition (MOCVD). It was found that the threshold current density was not obviously affected by the RTA, in contrast to MBE grown lasers, and that external differential efficiency and wall-plug efficiency increased, especially at high current region
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; rapid thermal annealing; semiconductor lasers; 980 nm; InGaAs-AlGaAs; InGaAs-AlGaAs 980-nm lasers; MBE grown lasers; MOCVD; external differential efficiency; high current region; high power 980-nm lasers; metalorganic chemical vapor deposition; postgrowth rapid thermal annealing; rapid thermal annealing; threshold current density; wall-plug efficiency; Laser modes; Laser theory; Molecular beam epitaxial growth; Power engineering and energy; Power lasers; Quantum well lasers; Rapid thermal annealing; Solid lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739492
