High power 980-nm lasers with external differential efficiency improved by rapid thermal annealing

Author

Yuan, Shu ; Fu, L. ; Chang, Y. ; Tan, H.H. ; Li, G. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

124

Abstract

We report the effects of postgrowth rapid thermal annealing (RTA) on InGaAs-AlGaAs 980-nm lasers grown by metalorganic chemical vapor deposition (MOCVD). It was found that the threshold current density was not obviously affected by the RTA, in contrast to MBE grown lasers, and that external differential efficiency and wall-plug efficiency increased, especially at high current region

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; rapid thermal annealing; semiconductor lasers; 980 nm; InGaAs-AlGaAs; InGaAs-AlGaAs 980-nm lasers; MBE grown lasers; MOCVD; external differential efficiency; high current region; high power 980-nm lasers; metalorganic chemical vapor deposition; postgrowth rapid thermal annealing; rapid thermal annealing; threshold current density; wall-plug efficiency; Laser modes; Laser theory; Molecular beam epitaxial growth; Power engineering and energy; Power lasers; Quantum well lasers; Rapid thermal annealing; Solid lasers; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739492

Filename

739492