Heavy p-type carbon doping to AlAs for InP based optoelectronic devices

Author

Sekiguchi, S. ; Miyamoto, T. ; Kimura, T. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

126

Abstract

We propose a novel C auto-doping method for AlAs grown by MOCVD using trimethylaluminum (TMAI) and tertiarybutylarsine (TBAs) and applying C heavily doped AlAs films as p-type doped layers in InP material systems. Some new device applications are also proposed. We proposed an auto-doping technique which enables to control doping level by only changing the V-III ratio. To investigate doping conditions, we grew AlAs on GaAs substrates by MOCVD

Keywords

III-V semiconductors; MOCVD; carbon; indium compounds; optical films; semiconductor doping; AlAs; C auto-doping method; C heavily doped AlAs films; GaAs; InP; InP based optoelectronic devices; InP material systems; MOCVD; V-III ratio; doping conditions; heavy p-type carbon doping; p-type doped layers; quantum well laser layer doping; tertiarybutylarsine; trimethylaluminum; Charge carrier density; Density measurement; Doping; Electrons; Gallium arsenide; Indium phosphide; MOCVD; Optoelectronic devices; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739493

Filename

739493