Acceleration sensor using SOI wafer with honeycomb insulator

In this paper, fabrication method of acceleration sensor with low parasitic capacitance is descried. By using Silicon on Honeycomb Insulator (SOHI) wafer as a base material instead of Silicon on insulator (SOI) wafer, parasitic capacitance has reduced to 20%. The sensitivity of the acceleration sensor measured from differential capacitance change revealed 1.5 fF/G. The linear relationship between gravity acceleration and detection capacitance is measured by using commercial C/V converting circuit. By combining the SOHI acceleration sensor and specially designed C/V converting circuit with ultra-low power consumption, the sensitivity of the acceleration sensor can be expected to increase in 22 times than that for SOI wafer. The C/V converter circuit with ultra low power consumption of 1.13-μW will realize long term and continuous monitoring of human activities by assembled with capacitive-type sensors based on SOHI wafer.