Antimonide-based approaches for long-wavelength VCSELs

Author

Klem, John F. ; Blum, Olga ; Lear, Kevin

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

130

Abstract

We demonstrate an optically-pumped all-epitaxial 1.56 μm VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 μm

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical pumping; reflectivity; semiconductor lasers; surface emitting lasers; 1.55 mum; 1.56 mum; AlAsSb-AlGaAsSb; AlAsSb-AlGaAsSb mirror stacks; AlGaAsSb; AlGaAsSb material system; InGaAs active region; InP substrate; antimonide-based approaches; high-reflectivity DBRs; long-wavelength VCSELs; optically-pumped all-epitaxial 1.56 μm VCSEL; refractive index contrast; Dielectric substrates; Distributed Bragg reflectors; Electric resistance; Electrical resistance measurement; Laboratories; Lattices; Mirrors; Optical materials; Refractive index; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739495

Filename

739495