Title :
Si nanocluster — Er interaction distance: The role of Er-Er energy migration
Author :
Kim, In Yong ; Shin, Jung H. ; Kim, Kyung Joong
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
The interaction distance between Si nanoluster and Er is investigated using multilayers. We find that the effective sensitization distance can be more than twice the cluster-Er interaction distance due to Er-Er energy transfer.
Keywords :
elemental semiconductors; erbium; multilayers; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; silicon; silicon compounds; sputter deposition; Si; SiOx-Si3N4:Er-Si3-N4-Si3N4:Er; effective sensitization distance; energy migration; energy transfer; interaction distance; multilayers; nanoluster; photoluminescence spectra; Annealing; Atom optics; Energy exchange; Erbium; Materials science and technology; Nonhomogeneous media; Optical films; Physics; Silicon; Temperature sensors;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338291
