• DocumentCode
    2471456
  • Title

    Si nanocluster — Er interaction distance: The role of Er-Er energy migration

  • Author

    Kim, In Yong ; Shin, Jung H. ; Kim, Kyung Joong

  • Author_Institution
    Dept. of Phys., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    58
  • Lastpage
    60
  • Abstract
    The interaction distance between Si nanoluster and Er is investigated using multilayers. We find that the effective sensitization distance can be more than twice the cluster-Er interaction distance due to Er-Er energy transfer.
  • Keywords
    elemental semiconductors; erbium; multilayers; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; silicon; silicon compounds; sputter deposition; Si; SiOx-Si3N4:Er-Si3-N4-Si3N4:Er; effective sensitization distance; energy migration; energy transfer; interaction distance; multilayers; nanoluster; photoluminescence spectra; Annealing; Atom optics; Energy exchange; Erbium; Materials science and technology; Nonhomogeneous media; Optical films; Physics; Silicon; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338291
  • Filename
    5338291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471456