Title :
Emitters beyond 2 μm based on a strain-compensated type-II Ga 1-xInxAs/GaAs1-ySby superlattice on InP substrate
Author :
Peter, M. ; Fuchs, F. ; Herres, N. ; Kiefer, R. ; Winkler, K. ; Bacchem, K.-H. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
We report on LEDs based on strain-compensated GaInAs-GaAsSb superlattice as the active region sandwiched between GaInAsP confinement layers. The top p-contact was formed on a 400 nm Zn-doped InP layer capped by a GaInAs contact layer
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor superlattices; 2 mum; 400 nm; GaInAs; GaInAs contact layer; GaInAs-GaAsSb; GaInAsP; GaInAsP confinement layers; InP; InP substrate; LEDs; Zn-doped InP layer; active region; strain-compensated GaInAs-GaAsSb superlattice; strain-compensated type-II Ga1-xInxAs/GaAs 1-ySby superlattice; top p-contact; Electroluminescence; Gallium arsenide; Indium phosphide; Laser excitation; Laser sintering; Light emitting diodes; Pump lasers; Spontaneous emission; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739496
