• DocumentCode
    2471468
  • Title

    Emitters beyond 2 μm based on a strain-compensated type-II Ga 1-xInxAs/GaAs1-ySby superlattice on InP substrate

  • Author

    Peter, M. ; Fuchs, F. ; Herres, N. ; Kiefer, R. ; Winkler, K. ; Bacchem, K.-H. ; Wagner, J.

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
  • Volume
    2
  • fYear
    1998
  • fDate
    3-4 Dec 1998
  • Firstpage
    132
  • Abstract
    We report on LEDs based on strain-compensated GaInAs-GaAsSb superlattice as the active region sandwiched between GaInAsP confinement layers. The top p-contact was formed on a 400 nm Zn-doped InP layer capped by a GaInAs contact layer
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor superlattices; 2 mum; 400 nm; GaInAs; GaInAs contact layer; GaInAs-GaAsSb; GaInAsP; GaInAsP confinement layers; InP; InP substrate; LEDs; Zn-doped InP layer; active region; strain-compensated GaInAs-GaAsSb superlattice; strain-compensated type-II Ga1-xInxAs/GaAs 1-ySby superlattice; top p-contact; Electroluminescence; Gallium arsenide; Indium phosphide; Laser excitation; Laser sintering; Light emitting diodes; Pump lasers; Spontaneous emission; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4947-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1998.739496
  • Filename
    739496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471468