Are carbon nanotubes the future of VLSI interconnections?

Author

Banerjee, Kaustav ; Srivastava, Navin

Author_Institution

Electr. & Comput. Eng., California Univ., Santa Barbara, CA

fYear

0

fDate

0-0 0

Firstpage

809

Lastpage

814

Abstract

Increasing resistivity of copper with scaling and rising demands on current density requirements are driving the need to identify new wiring solutions for deep nanometer scale VLSI technologies. Metallic carbon nanotubes (CNTs) are promising candidates that can potentially address the challenges faced by copper and thereby extend the lifetime of electrical interconnects. This paper examines the state-of-the-art in CNT interconnect research and discusses both the advantages and challenges of this emerging nanotechnology

Keywords

VLSI; carbon nanotubes; copper; integrated circuit interconnections; nanotechnology; nanowires; CNT interconnect; VLSI interconnections; copper resistivity; current density; deep nanometer scale VLSI technology; electrical interconnect lifetime; metallic carbon nanotubes; nanotechnology; wiring solutions; Carbon nanotubes; Conductivity; Copper; Current density; Integrated circuit interconnections; Integrated circuit reliability; Scattering; Temperature; Thermal resistance; Very large scale integration; Carbon nanotubes; Design; Experimentation; Performance; Reliability; Theory; VLSI; interconnects;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 2006 43rd ACM/IEEE

Conference_Location

San Francisco, CA

ISSN

0738-100X

Print_ISBN

1-59593-381-6

Type

conf

DOI

10.1109/DAC.2006.229330

Filename

1688908