Title :
Sensitization of the 1.54μm Er emission in amorphous silicon nitride films
Author :
Yerci, Selçuk ; Li, Rui ; Basu, Soumendra N. ; Negro, Luca Dal
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.
Keywords :
amorphous state; erbium; heat treatment; photoluminescence; silicon compounds; sputter deposition; thermo-optical effects; thin films; SiN:Er; amorphous silicon nitride films; erbium emission; film fabrication; optical properties; photoluminescence; reactive sputtering; sensitization; structural properties; wavelength 1.54 mum; Amorphous materials; Amorphous silicon; Erbium; Optical films; Optical sensors; Photoluminescence; Photonics; Semiconductor films; Stimulated emission; Temperature; Amorphous Semiconductors; Erbium; Photoluminescence; Silicon Alloys;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338293
