DocumentCode :
2471503
Title :
The zen of nonvolatile memories
Author :
Prinz, Erwin J.
Author_Institution :
Freescale Semicond., Inc., Austin, TX
fYear :
0
fDate :
0-0 0
Firstpage :
815
Lastpage :
820
Abstract :
Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore´s law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node. Both evolutionary and novel solutions are being pursued in the industry. While the traditional floating gate technology will scale to the 65 nm node, novel device structures and array architectures will be needed past that node
Keywords :
integrated circuit reliability; nanotechnology; random-access storage; silicon; Moore law; code storage; data storage; floating gate bitcell; floating gate technology; nonvolatile memories; scaling limits; silicon technology; Integrated circuit technology; Microcontrollers; Moore´s Law; Nonvolatile memory; Permission; Random access memory; Read-write memory; Silicon; System-on-a-chip; Very large scale integration; Design; Experimentation; FeRAM; MRAM; Measurement; Nonvolatile memories; Reliability; SONOS; Security; floating gate; nanocrystal; phase change memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference, 2006 43rd ACM/IEEE
Conference_Location :
San Francisco, CA
ISSN :
0738-100X
Print_ISBN :
1-59593-381-6
Type :
conf
DOI :
10.1109/DAC.2006.229232
Filename :
1688909
Link To Document :
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