Title :
Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure
Author :
Iwamoto, S. ; Matoba, O. ; Shimura, T. ; Kuroda, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 μm, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photorefractive materials; resonant states; semiconductor quantum wells; 1 mum; GaAs substrate; InGaAs-GaAs; InGaAs-GaAs MQW structure; InGaAs-GaAs multiple quantum well structure; band gap energy; biomedical measurements; fabrication process; resonant photorefractive effect; resonant transition; spectral region; Biological materials; Biomedical materials; Biomedical measurements; Fabrication; Gallium arsenide; Indium gallium arsenide; Photorefractive effect; Quantum well devices; Resonance; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739503
