Title :
Monolithic Ge/Si avalanche photodiodes
Author :
Kang, Yimin ; Morse, Mike ; Paniccia, Mario J. ; Zadka, Moshe ; Saad, Yuval ; Sarid, Gadi ; Pauchard, Alexandre ; Zaoui, Wissem Sfar ; Chen, Hui-Wen ; Dai, Daoxin ; Bowers, John E. ; Liu, Han-Din ; Mcintosh, Dion C. ; Zheng, Xiaoguang ; Campbell, Joe C.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; integrated optics; optical waveguides; photodetectors; silicon; Ge-Si; gain-bandwidth product; mesa-type avalanche photodiodes; mesa-type devices; monolithic avalanche photodiodes; receiver sensitivity; waveguide-type avalanche photodiodes; waveguide-type devices; Absorption; Avalanche photodiodes; Bandwidth; Breakdown voltage; Dark current; Gain measurement; Optical waveguides; Photoconductivity; Photonics; Silicon;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338300
