A high power Ge n-i-p waveguide photodetector on silicon-on-insulator substrate

Author

Ramaswamy, Anand ; Nunoya, Nobuhiro ; Johansson, Leif A. ; Bowers, John E. ; Sysak, Matthew N. ; Yin, Tao

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

19

Lastpage

21

Abstract

We demonstrate high current operation of an evanescently coupled Ge waveguide photodetector grown on top of a Si rib waveguide. A 7.4 mum times 500 mum photodetector was found to dissipate 1.003 W of power (125.49 mA at -8V).

Keywords

elemental semiconductors; germanium; heat transfer; integrated optics; optical waveguides; photodetectors; rib waveguides; thermo-optical devices; Ge; Ge n-i-p waveguide photodetector; Si; current 125.49 mA; evanescently coupled waveguide photodetector; heat flow; high power photodetector; power 1.003 W; silicon rib waveguide; silicon-on-insulator substrate; size 500 mum; size 7.4 mum; temperature profile; thermal simulations; Detectors; Indium phosphide; Optical surface waves; Optical waveguides; Photodetectors; Photodiodes; Silicon on insulator technology; Space charge; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338302

Filename

5338302