• DocumentCode
    2471738
  • Title

    Low-dark-current pin photodiodes using as-grown Ge with an i-Si insertion layer: Mechanism of dark current suppression

  • Author

    Ishikawa, Yasuhiko ; Park, Sungbong ; Osaka, Jiro ; Wada, Kazumi

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    Low dark current of ~10 mA/cm2 by inserting i-Si in as-grown Ge pin photodiodes is dominated by the carrier generation in wider-gap i-Si. This property is useful for photodiode applications of defective Ge prepared at low temperatures.
  • Keywords
    Fermi level; dark conductivity; elemental semiconductors; germanium; p-i-n photodiodes; silicon; Fermi level pinning; Si-Ge; carrier generation; dark current suppression; insertion layer; pin photodiodes; Annealing; Current measurement; Dark current; Electrons; Etching; Fabrication; Intersymbol interference; PIN photodiodes; Photonic band gap; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338303
  • Filename
    5338303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2471738